Upgrade of Drain Current Compact Model for Nanoscale Triple-Gate Junctionless Transistors to Continuous and Symmetric

摘要

In this brief, we upgrade our initial drain current compact model for triple-gate junctionless transistors (JLTs) to a continuous model satisfying the source/drain (S/D) symmetry. This is achieved by reformulating the key equations of our original model, using Lambert-function- based terminal charges. The upgraded model is compact, bulk-referenced valid in all regions of operation and it is validated through comparison with experimental data to verify its accuracy. The symmetry condition is investigated and validated performing the dc Gummel symmetry test (GST) for all derivatives up to the fifth order.