Leakage-current-induced hot-carrier degradation of p-channel MOSFETs

摘要

Leakage-current-induced hot-carrier effects have been observed during stressing of p-channel MOSFETs in the OFF state with V/sub GS/<0 V and V/sub DS/>0 V. This mode of stressing results in increased leakage current and a positive shift in the value of V/sub GS/, corresponding to the onset of avalanche breakdown of the drain junction. These effects are related to generation of interface states near the drain in forward-mode operation. By comparison, conventional stressing in the ON state with V/sub GS/>0 V and V/sub DS/>0 V resulted in little change in these p-channel MOSFET characteristics.