Hot-carrier degradation behavior of N- and P-channel MOSFET's under dynamic operation conditions

摘要

An in-depth study of the dynamic hot-carrier degradation behavior of N- and P-channel MOS transistors was performed based on the change of charge pumping and I-V characteristics. It is shown that for transistors with channel lengths ranging from 2 to 0.5 /spl mu/m and frequencies up to 100 MHz the degradation under dynamic stress can completely be described as a quasi-static degradation, provided all static degradation effects are taken into account in the appropriate way. This means that the influence of post-stress effects and charge buildup or charge detrapping have to be considered.