A new technique for determining the generation lifetime profile in thin semiconductor films with application to silicon-on-insulator (SOI) substrates

摘要

A differential technique which uses reverse-biased current-voltage (I-V) and capacitance-voltage (C-V) measurements on a p-n junction or a Schottky barrier diode for determining the generation lifetime profile in thin semiconductor films is discussed. It is shown that the bias-independent current can be eliminated by this differential technique. Furthermore, any error caused by field-enhanced current can be estimated. This method has been used to determine the generation lifetime profile in thin silicon epitaxial film grown on SIMOX substrates.