CHARACTERIZATION OF CARRIER GENERATION IN THIN-FILM SOI DEVICES BY REVERSE GATED-DIODE TECHNIQUE AND ITS APPLICATION AT HIGH TEMPERATURES

摘要

This paper presents a revision of the reverse gated-diode technique for application to thin-film SOI devices. Based on modeling of gate-controlled volume and surface generation components, a reliable approach for extracting generation parameters in thin-film SOI devices from reverse gated-diode measurements is developed and validated for high temperatures. The proposed approach is used for characterizing generation processes and evaluating generation parameters in UNIBOND SOI devices operating at high temperatures (in the temperature range 100 - 300°C).