A new linear sweep technique to measure generation lifetimes in thin-film SOI MOSFET's

摘要

A new linear sweep technique to measure generation lifetimes (/spl tau//sub g/) in silicon-on-insulator (SOI) material is presented. A detailed analytic formulation is applied to fully-depleted and partially-depleted SOI films and used to simulate the behavior of the SOI devices under linear sweep conditions. A novel algorithm accurately determines the effective generation width in fully depleted SOI films. The measurement technique is experimentally verified by applying the algorithm to fully depleted SIMOX P-channel MOSFET's where observed lifetimes ranged from 0.3 /spl mu/s to 2.4 /spl mu/s.