High-performance MOCVD-grown AlGaAs/GaAs heterojunction bipolar transistors with carbon-doped base

摘要

Excellent microwave performance is demonstrated by metalorganic chemical vapor deposition (MOCVD) grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with carbon-doped base. These devices achieve a current-gain cutoff frequency of 76 GHz and a maximum frequency of oscillation of 102 GHz. Varying the device structures allows the current gain to reach over 300 in structures with a base doping of 2*10/sup 19 /cm/sup -3/. A static divide-by-four divider implemented with C-doped base HBTs has been operated up to a frequency of 20.4 GHz. These results indicate the suitability of carbon doping for high-performance HBTs.