首页> 外文OA文献 >Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors

【2h】

Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors

机译：计算基础电流分量和inAlAs / GaAs和Inalas / Ingaas异质结双极晶体管的相对重要性的测定

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
J. J. Liou;
展开▼
作者单位

展开▼
年度 1991
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. A collector current model for InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with non-ideal effects [J] . Yang-Hua Chang, Chun-Teng Huang Microelectronics & Reliability . 2012,第7期

机译：具有非理想效应的InAlAs / InGaAsSb / InGaAs双异质结双极晶体管的集电极电流模型
2. Elimination of Current Blocking in Ternary InAlAs-InGaAs-InAlAs Double Heterojunction Bipolar Transistors [J] . Mohiuddin M., Tauqeer T., Sexton J., Electron Devices, IEEE Transactions on . 2010,第12期

机译：消除三元InAlAs-InGaAs-InAlAs双异质结双极晶体管中的电流阻塞
3. Influence of pseudomorphic base-emitter spacer layers on current-induced degradation of beryllium-doped InGaAs/InAlAs heterojunction bipolar transistors [J] . Kaiyan Zhang, Xiangkun Zhang IEEE Transactions on Electron Devices . 1996,第1期

机译：拟态基极-发射极隔离层对掺杂铍的InGaAs / InAlAs异质结双极晶体管的电流诱导降解的影响
4. InAlAs/InGaAsSb/InGaAs double heterojunction bipolar transistors with high current gain and low base sheet resistance [C] . Shu-Han Chen, Chao-Min Chang, Pei-Yi Chiang, Indium Phosphide amp; Related Materials, 2009. IPRM '09 . 2009

机译：具有高电流增益和低基片电阻的InAlAs / InGaAsSb / InGaAs双异质结双极晶体管
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Dead space effect in space-charge region of collector of AlGaAs/InGaAs p-n-p heterojunction bipolar transistors [O] . Yang ES, Yan BP, Wang XQ 2001

机译：alGaas / InGaas p-n-p异质结双极晶体管集电极空间电荷区的死区效应
8. Influence of Pseudomorphic Base-Emitter Spacer Layers on Current-InducedDegradation of Beryllium-Doped InGaAs/InAlAs Heterojunction Bipolar Transistors [R] . Zhang, K., Zhang, X., Bhattacharya, P., 1996

机译：假晶基极 - 发射极间隔层对铍掺杂InGaas / Inalas异质结双极晶体管电流诱导退化的影响

Calculation of the base current components and determination of their relative importance in AlGaAs/GaAs and InAlAs/InGaAs heterojunction bipolar transistors

著录项

引文网络

相似文献

相关主题

期刊订阅