High/f/sub max/ collector-up AlGaAs/GaAs heterojunction bipolar transistors with a heavily carbon-doped base fabricated using oxygen-ion implantation

摘要

AlGaAs/GaAs collector-up heterojunction bipolar transistors (HBTs) with a heavily carbon-doped base layer were fabricated using oxygen-ion implantation and zinc diffusion. The high resistivity of the oxygen-ion-implanted AlGaAs layer in the external emitter region effectively suppressed electron injection from the emitter, allowing collector current densities to reach values above 10/sup 5/ A/cm/sup 2/. For a transistor with a 2- mu m*10- mu m collector, f/sub T/ was 70 GHz and f/sub max/ was as high as 128 GHz. It was demonstrated by on-wafer measurements that the first power performance of collector-up HBTs resulted in a maximum power-added efficiency of as high as 63.4% at 3 GHz.