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High-f/sub max/ Collector-up AIGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated by Oxygen-ion implantation

机译：通过氧离子注入制造的具有高碳掺杂基极的高f / sub max /集电极式AIGaAs / GaAs异质结双极晶体管

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《》|2001年|P.0-91-0-92|共1页
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Yamahata; S.; Matsuoka; Y.;
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中图分类无线电电子学、电信技术 ;
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专利

1. High-f/sub max/ collector-up AlGaAs/GaAs heterojunction bipolar transistors with heavily carbon-doped base fabricated by oxygen-ion implantation [J] . Yamahata S., Matsuoka Y. IEEE Transactions on Electron Devices . 1992 ,第11期

机译：通过氧离子注入制造的具有高碳掺杂基极的高f / sub max /集电极向上AlGaAs / GaAs异质结双极晶体管
2. High/f/sub max/ collector-up AlGaAs/GaAs heterojunction bipolar transistors with a heavily carbon-doped base fabricated using oxygen-ion implantation [J] . Yamahata S., Matsuoka Y. IEEE Electron Device Letters . 1993 ,第4期

机译：高/ f / sub max /集电极向上的AlGaAs / GaAs异质结双极晶体管，具有通过氧离子注入制造的重掺杂碳的基极
3. Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation [J] . Kazuhiro MOCHIZUKI, Ken-ichi TANAKA, Takashi SHIOTA, IEICE Transactions on Electronics . 2006 ,第7期

机译：快速热退火对B离子注入制备的InGaP / GaAs集电极-异质结双极晶体管的偏置应力引起的基极泄漏的影响。
4. High-f/sub max/ Collector-up AIGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated by Oxygen-ion implantation [C] . Yamahata S., Matsuoka Y., Institute of Electric and Electronic Engineer Annual Device Research Conference . 2001

机译：高F / SUB MAX / CollectoL-UP AIGAAS / GAAS异质结双极晶体管，具有由氧离子植入制备的重碳掺杂底座
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas [O] . Hsu CC, Lo HB, Yang ES, 1997

机译：通过使用氮气作为载气的金属有机化学气相沉积生长的碳掺杂的GaInp / Gaas异质结双极晶体管
7. InP/InGaAs Heterojunction Bipolar Transistors Grown on Ge/P Co-implanted InP Substrates by Metal-Organic Molecular Bean Epitaxy. [R] . Sung, W. J., Kopf, R. F., Werder, D. J., 2002

机译：通过金属有机分子豆外延生长在Ge / p共注入Inp衬底上的Inp / InGaas异质结双极晶体管。

High-f/sub max/ Collector-up AIGaAs/GaAs Heterojunction Bipolar Transistors with a Heavily Carbon-Doped Base Fabricated by Oxygen-ion implantation

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