Carbon-doped GaInP/GaAs heterojunction bipolar transistors grown by metalorganic chemical vapor deposition using nitrogen as the carrier gas

摘要

The use of nitrogen as the carrier gas in metalorganic chemical vapor deposition (MOCVD) for the growth of carbon-doped GaInP/GaAs heterojunction bipolar transistors (HBTs) is reported. The material quality grown using a nitrogen carrier gas is the same as that of using a hydrogen carrier gas. High carbon doping and hole concentrations of 3 × 1020 and 2 × 1020 cm-3 in GaAs were obtained. The fabricated HBTs showed very good DC and RF performances indicating that nitrogen can be a promising carrier gas for MOCVD growth. © 1997 American Institute of Physics.