High-performance carbon-doped base GaAs/AlGaAs heterojunction bipolar transistor grown by MOCVD

摘要

High-performance HBTs with a carbon-doped base layer (p=4*10/sup 19/ cm/sup -3/) are reported. The use of carbon as a p-type dopant allows the emitter-base p-n junction to be accurately positioned relative to the heterojunction, and the MOCVD growth method ensures consistency and uniformity of the wafer epitaxial structure. Microwave HBTs with current gains h/sub FE/=50 and f/sub T/ and f/sub max/ values of 42 GHz and 117 GHz, respectively, are reported.