Noise performance of low power 0.25 micron gate ion implanted D-mode GaAs MESFET for wireless applications

摘要

We report on the noise performance of low power 0.25 /spl mu/m gate ion implanted D-mode GaAs MESFETs suitable for wireless personal communication applications. The 0.25 /spl mu/m/spl times/200 /spl mu/m D-mode MESFET has a f/sub t/ of 18 GHz and f/sub max/ of 33 GHz at a power level of 1 mW (power density of 5 mW/mm). The noise characteristics at 4 GHz for the D-mode MESFET are F/sub min/=0.65 dB and G/sub assoc/=13 dB at 1 mW. These results demonstrate that the GaAs D-mode MESFET is also an excellent choice for low power personal communication applications.