Optimal noise matching of 0.25 micron gate GaAs MESFETs for low power personal communications receiver circuit designs

摘要

0.25 /spl mu/m GaAs MESFETs are shown to be excellent device candidates for low current, low noise receiver circuits in personal communicators. The measured low current performance of ion-implanted 0.25 /spl mu/m gate FETs is reported for device gate widths of 100 /spl mu/m and 200 /spl mu/m and device bias conditions 0.5 V>V/sub ds/>1.5 V and 0.2 mA>I/sub ds/>5 mA. The 0.25 /spl mu/m/spl times/200 /spl mu/m device achieved a noise figure of 0.69 dB and associated gain of 12.4 dB at 2 GHz while drawing 1 mA of drain current. The matching characteristics and equivalent circuit models of these devices under low current bias conditions are also discussed.