Microwave performance of low-power ion-implanted 0.25-micron gate GaAs MESFET for low-cost MMIC's applications

摘要

Low-power microwave performance of an enhancement mode) (E-mode ion-implanted GaAs MESFET is reported. The 0.25- mu m*100- mu m E-MESFET has a threshold voltage of V/sub th/=0.0 V. At 1.0-mW operation of power with a bias condition of V/sub ds/=0.5 V and I/sub ds/-2 mA, a noise figure of 0.85 dB with an associated gain of 15 dB was measured at 4 GHz. These results demonstrate that the GaAs E-MESFET is an excellent choice for low-power personal communication applications.