Ultra low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications

摘要

The high-speed and noise performance of 0.15- mu m gate GaAs MESFETs for microwave and millimeter-wave IC applications is reported. The best extrinsic f/sub t/ is 109 GHz without correction for pad parasitics, which is equivalent to an intrinsic f/sub t/ of 134 GHz. The 0.15- mu m*200- mu gate GaAs MESFET achieved a 0.6-dB noise figure with a 17-dB associated gain at 10 GHz and a 0.9-dB noise figure with a 13-dB associated gain at 18 GHz. The measured noise figure and associated gain are the best reported for GaAs MESFETs and are comparable to the best noise/gain performance of HEMTs and P-HEMTs.