Super-low-noise performance of direct-ion-implanted 0.25- mu m-gate GaAs MESFET's

摘要

The authors report on advanced ion implantation GaAs MESFET technology using a 0.25- mu m 'T' gate for super-low-noise microwave and millimeter-wave IC applications. The 0.25*200- mu m-gate GaAs MESFETs achieved 0.56-dB noise figure with 13.1-dB associated gain at 50% I/sub DSS/ and 0.6 dB noise figure with 16.5-dB associated gain at 100% I/sub DSS/ at a measured frequency of 10 GHz. The measured noise figure is comparable to the best noise performance of AlGaAs/GaAs HEMTs and AlGaAs/InGaAs/GaAs pseudomorphic HEMTs.