Sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices

摘要

The paper reports the sidewall-related narrow channel effect in mesa-isolated fully-depleted ultra-thin SOI NMOS devices. Based on the study, contrary to bulk NMOS devices, for a channel width shrinking from 1 /spl mu/m to 0.2 /spl mu/m, the threshold voltage of mesa-isolated ultra-thin SOI NMOS devices with a 1000 /spl Aring/ thin film doped with 10/sup 17/ cm/sup -3/, decreases by 0.145 V for a front gate oxide of 100 /spl Aring/ and a sidewall oxide of 150 /spl Aring/ as a result of the sidewall edge effect.