Measurement of I-V curves of silicon-on-insulator (SOI) MOSFET's without self-heating

摘要

A new method for measuring the output (I/sub D/-V/sub D/) characteristics of SOI MOSFET's without self-heating is described. The method uses short pulses with a low repetition rate, and a reverse transient loadline construction. The technique is demonstrated by measuring 0.25 /spl mu/m bulk and SOI MOSFET's with 5-nm gate oxide. Application of the method to the extraction of device temperature as a function of DC power is also illustrated.