Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs

摘要

Low frequency excess noise associated to gate-induced floating body effect is for the first time reported in Partially Depleted SOI MOSFETs with ultrathin gate oxide. This was investigated with respect to floating body devices biased in linear regime. Due to a body charging from the gate, a Lorentzian-like noise component superimposes to the conventional 1/f noise spectrum. This excess noise exhibits the same behavior as the Kink-related excess noise previously observed in Partially Depleted devices in saturation regime.