PVD HfO/sub 2/ for high-precision MIM capacitor applications

摘要

Metal-insulator-metal (MIM) capacitors are fabricated using sputtered HfO/sub 2/ with Ta and TaN for top and bottom electrodes, respectively. High-capacitance densities from 4.7 to 8.1 fF//spl mu/m/sup 2/ have been achieved while maintaining the leakage current densities around 1 /spl times/ 10/sup -8/ A/cm/sup 2/ within the normal circuit bias conditions. A guideline for the insulator thickness and its dielectric constant has been obtained by analyzing the tradeoff between the linearity coefficient and the capacitance density.