Broadband Microwave Noise Characteristics of High-Linearity Composite-Channel Al{sub}(0.3)Ga{sub}(0.7)N/Al{sub}(0.05)Ga{sub}N/GaN HEMTs

摘要

We report broadband microwave noise characteristics of a high-linearity composite-channel HEMT (CC-HEMT). Owing to the novel composite-channel design, the CC-HEMT exhibits high gain and high linearity such as an output third-order intercept point (OIP3) of 33.2 dBm at 2 GHz. The CC-HEMT also exhibits excellent microwave noise performance. For l-μm gate-length devices, a minimum noise figure (NF{sub}(min)) of 0.7 dB and an associated gain (G{sub}a) of 19 dB were observed at 1 GHz, and an (NF{sub}(mi)) of 3.3 dB and a G{sub}a of 10.8 dB were observed at 10 GHz. The dependence of the noise characteristics on the physical design parameters, such as the gate-source and gate-drain spacing, is also presented.