MMIC LNA based novel composite-channel Al_(0.3)Ga_(0.7)N/Al_(0.05)Ga_(0.95)N/GaN HEMTs

摘要

A microwave monolithic integrated circuit (MMIC) C-band low noise amplifier (LNA) using 1 μm-gate composite-channel Al_(0.3)Ga_(0.7)N/Al_(0.05)Ga_(0.95)N/GaN high electron mobility transistors (CC-HEMTs) has been designed, fabricated and characterized. The material structure and special channel of CC-HEMT were given and analysed. The MMIC LNA with CC-HEMT showed a noise figure of 2.4 dB, an associated gain of 12.3 dB, an input return loss of -6 dB and an output return loss of -16 dB at 6 GHz. The IIP3 of the LNA is 13 dBm at 6 GHz. The LNA with 1 μm × 100 μm device showed very high-dynamic range with decent gain and noise figure.