Low noise distributed Amplifier using Composite-Channel Al_(0.3)Ga_(0.7)N/Al_(0.05)Ga_(0.95)N/GaN HEMTs

摘要

Low noise distributed amplifiers (DAs) using 1 μ m-gate low noise composite-channel Al_(0.3)Ga_(0.7)N/Al_(0.05)Ga_(0.95)N/GaN HEMT (CC-HEMT) device were designed and fabricated. Design process and Simulated results of the DA are reported in this paper. Simulated results show the low noise DA has input and output VSWR (voltage standing wave ratio) of less than 2, associated gain of more than 7.5dB and gain ripple of less than 1dB at frequency from 2GHz to 10GHz. Noise figure of the DA is less than 4.3 dB at frequency from 2 to 6 GHz and 7 dB at frequency from 2 to 10 GHz.