SiGe-Channel Confinement Effects for Short-Channel PFETs With Nonbandedge Gate Workfunctions

摘要

Thin SiGe-channel confinement is found to provide significant control of the short channel effects typically associated with nonbandedge gate electrodes, in an analogous manner to ultrathin-body approaches. Gate workfunction requirements for thin-SiGe-channel p-type field effect transistors are therefore relaxed substantially more than what is expected from a simple observation of the difference between gate and channel workfunctions. In particular, thin-SiGe channels are shown to enable cost-effective high-performance bulk CMOS technologies with a single gate workfunction near the conduction bandedge.