MODELING OF HOLE CONFINEMENT GATE VOLTAGE RANGE FOR SiGe-CHANNEL P-MOSFETs

摘要

An analytical model of hole confinement gate voltage range is derived for SiGe-channel p-MOSFETs and verified by SEDAN-3. The dependencies of hole confinement on threshold voltage, gate oxide and Si cap thicknesses, gate material, and Ge mole fraction are discussed. Various bulk and SOI SiGe p-MOSFETs are clarified to have the same hole confinement with threshold voltage adjustment.