Simulation study of Short-Channel Effects and quantum confinement in double-gate FinFET devices with high-mobility materials

摘要

We developed a quantum-mechanical simulation code to study subthreshold performances and carrier quantum confinement in double-gate MOSFETs with high-mobility channel materials like Ce and III—V semiconductors. The code is based on the two-dimensional and self-consistent numerical solving of Poisson and Schrodinger equations coupled with the drift-diffusion transport equation. We systematically evaluate and analyze drain-induced barrier lowering and carrier quantum confinement in Si, Ge, In_(0.53)Ga_(0.47)As and GaAs based double-gate devices. Results show that SCEs in Ino.53Gao.47As and GaAs devices are lower than in Si and Ge counterparts. However, when the channel film thickness is reduced, carrier confinement is found to strongly impact double-gate device operation with high-mobility materials owing to their low confinement effective mass in the lowest energy valley.