Enhanced Strain Effects in 25-nm Gate-Length Thin-Body nMOSFETs With Silicon–Carbon Source/Drain and Tensile-Stress Liner

摘要

We report the demonstration of 25-nm gate-length LG strained nMOSFETs featuring the silicon-carbon source and drain (Si1-yCyS/D) regions and a thin-body thickness T body of ~18 nm. This is also the smallest reported planar nMOSFET with the Si1-yCyS/D stressors. Strain-induced mobility enhancement due to the Si1-yCy S/D leads to a significant drive-current IDsat enhancement of 52% over the control transistor. Furthermore, the integration of tensile-stress SiN etch stop layer and Si1-yC yS/D extends the IDsat enhancement to 67%. The performance enhancement was achieved for the devices with similar subthreshold swing and drain-induced barrier lowering. The Si1-y CyS/D technology and its combination with the existing strained-silicon techniques are promising for the future high-performance CMOS applications