Strain-Engineered Si/SiGe Resonant Interband Tunneling Diodes Grown on $hbox{Si}_{0.8}hbox{Ge}_{0.2}$ Virtual Substrates With Strained Si Cladding Layers

摘要

Strain-engineered Si-based resonant interband tunneling diodes grown on commercially available $hbox{Si}_{0.8}hbox{Ge}_{0.2}$ virtual substrates were developed that address issues of P dopant diffusion and electron confinement. Strain-induced band offsets were effectively utilized to improve tunnel diode performance versus the control device, particularly the peak-to-valley current ratio (PVCR). By growing tensilely strained Si layers cladding the P $ delta$-doping plane, the quantum well formed by the P $delta$ -doping plane is deepened, which concurrently increases the optimal annealing temperature from 800 $^{circ}hbox{C}$ to 835 $^{ circ}hbox{C}$ and facilitates an increase in the PVCR up to 1.8 $times$ from 1.6 to 2.8 at room temperature, which is significantly better than previous results on strained substrates.