InP-BASED STRAINED In{sub}0.8Ga{sub}0.2As/AlAs RESONANT InP-BASED STRAINED In{sub}0.8Ga{sub}0.2As/AlAs RESONANT TUNNELING DIODES WITH HIGH PEAK-CURRENT DENSITY AND LARGE PEAK-TO-VALLEY CURRENT RATIO GROWN BY METAL-ORGANIC VAPOR-PHASE EPITAXY

摘要

InP-based strained In{sub}0.8Ga{sub}0.2As/AlAs resonant tunneling diodes (RTDs) were grown by metal-organic vapor-phase epitaxy (MOVPE) with the aim of fabricating of all-MOVPE-grown InP-based monolithic devices. We obtained high peak-current density (j{sub}p) of 1.46×10{sup}5 A/cm{sup}2, a peak-to-valley current ratio (PVR) of 7.7, and low peak voltage of 0.43 V simultaneously in a sample with 6-mono-layer-(ML)-thick AlAs barriers and a 4.5 nm-thick well at room temperature. A j{sub}p of 4.09×10{sup}5 A/cm{sup}2, with PVR of 3.8 was obtained for the sample with 4-ML-thick barriers. To the best of our knowledge,. these are the best room-temperature characteristics ever achieved for any reported MOVPE-grown RTDs constructed using the InGaAlAs material system.