Investigation on Self-Heating Effect in Gate-All-Around Silicon Nanowire MOSFETs From Top-Down Approach

摘要

The self-heating effect is becoming a critical concern for nanoscaled devices with low dimensions. In this letter, the self-heating effect is experimentally investigated in gate-all-around (GAA) silicon nanowire MOSFETs (SNWTs) fabricated from the CMOS-compatible top-down approach. With the multifinger and multiwire test structure, the impact of the self-heating effect is successfully characterized. The results indicate that even if the SNWT is fabricated on the bulk silicon substrate, the impact of the self-heating effect is comparable or even a little bit worse than that in SOI devices, probably due to the 1-D nature of nanowire and increased phonon-boundary scattering in the GAA architecture.