A Nonvolatile Memory With Resistively Switching Methyl-Silsesquioxane

摘要

Crossbar structures with integrated methyl-silsesquioxane (MSQ) were fabricated by UV nanoimprint lithography. The sandwiched MSQ film was used for the planarization of the bottom electrodes' interface as well as for the realization of functional resistively switching crosspoint junctions. With our process, future nonvolatile crossbar memories with stacking and, thus, high integration density potential can be realized. Using MSQ as functional material additionally indicates an attractive opportunity because it is highly CMOS compatible. By programming word registers with different bit patterns, we demonstrate the potential of this crossbar architecture for future memory and logic applications.