The Compact Modeling of Channel Potential in Sub-30-nm NAND Flash Cell String

摘要

This letter presents a compact model of nand Flash strings in which complex characteristics of scaled-down Flash cells can be captured very accurately through simple circuit simulation. Different from previous modeling studies, the proposed model has detailed physical descriptions for channel potential of Flash cell so that various program disturbances due to leakages in nand string can be easily analyzed. The compact model of channel potential is fully compatible with BSIM4 SPICE model. By applying compact model to the 30-nm nand product, many phenomena in the device were realized with more than 95% accuracy at the expense of only a few minutes.