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机译:3-D NAND闪存串中GIDL辅助擦除的紧凑型造型
Politecn Milan Dipartimento Elettron Informaz & Bioingn Piazza L da Vinci 32 I-20133 Milan Italy;
Politecn Milan Dipartimento Elettron Informaz & Bioingn Piazza L da Vinci 32 I-20133 Milan Italy;
Politecn Milan Dipartimento Elettron Informaz & Bioingn Piazza L da Vinci 32 I-20133 Milan Italy;
Politecn Milan Dipartimento Elettron Informaz & Bioingn Piazza L da Vinci 32 I-20133 Milan Italy;
Politecn Milan Dipartimento Elettron Informaz & Bioingn Piazza L da Vinci 32 I-20133 Milan Italy;
NAND Flash memories; Gate-induced drain leakage; Erase; Compact modeling; Semiconductor device modeling;
机译:3-D NAND闪存字符串中GIDL辅助擦除的紧凑模型
机译:十亿分之一nand闪存阵列中的串电流:紧凑模型研究
机译:亚30纳米NAND闪存单元串中通道电势的紧凑建模
机译:根据3-D NAND闪存中的编程/擦除周期计数,在短期保留期间对充电失败机制进行建模
机译:编程,擦除和读取闪存EEPROM的瞬态模型。
机译:有擦除让事情更清楚? SchmidtLiefooghe&De Houwer()的评论:任务切换效果的eocodic模型:从内存中删除homunculus
机译:3-D NAND闪存中程序/擦除循环期间横向电荷扩散劣化的原子研究