Performance Improvement by Stress Memorization Technique in Trigate Silicon Nanowire MOSFETs

摘要

We achieved significant on-current improvement in trigate silicon nanowire transistors by applying stress memorization technique (SMT). We found that the performance improvement by SMT in $langlehbox{110}rangle$-oriented nanowire nFETs is caused by both the mobility improvement due to vertical compressive strain and the parasitic resistance reduction due to positive fixed charges at the gate edge induced by SMT process. Mobility increase ratio by SMT increases with reducing the nanowire width due to the enhanced strain. Although both the mobility and the parasitic resistance are degraded by SMT in pFETs, much larger performance improvement in nFETs leads to the improvement of total CMOS performance by SMT.