On the Response Time of Thin-Film Silicon Lateral Metal-Semiconductor-Metal Photodetectors

摘要

In this letter, we study the response time characteristics of lateral hydrogenated amorphous silicon (a-Si:H) and nanocrystalline silicon metal-semiconductor-metal (MSM) photodetectors. Devices with response time of (71~mu s) under green light illumination with (lambda =525~nm) (the wavelength of choice for indirect X-ray imaging) have been fabricated. The results show 42-fold and 4.2-fold improvement over the state of art single layer a-Si:H and double layer a-Si:H/molybdenum-disulphide (MoS₂) MSM detectors, respectively.