Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate

摘要

This letter reports on the demonstration of microwave power performance at 40 GHz on AlGaN/GaN high-electron mobility transistor grown on silicon (111) substrate by molecular beam epitaxy. A maximum dc current density of 1.1 mm and a peak extrinsic transconductance of 374 mSmm are obtained for 75-nm gate length device. At V, continuous-wave output power density of 2.7 mm is achieved at 40 GHz associated with 12.5% power-added efficiency and a linear power gain ( of 6.5 dB. The device exhibits an intrinsic current gain cutoff frequency of 116 GHz and a maximum oscillation frequency of 150 GHz. This performance demonstrates the capability of low cost microwave power devices up to Ka-band.