System On Microheater for On-Chip Annealing of Defects Generated by Hot-Carrier Injection, Bias Temperature Instability, and Ionizing Radiation

摘要

An on-chip immune system against hot-carrier stress, bias temperature instability, and total ionizing dose degradation is presented. A system on microheater provides defect annealing capability for recovering bulk trapped charges and interface states. The microheater and the system-on-chip are fabricated separately and stacked into a single package, which can be implemented on any arbitrary commercial-off-the-shelf device as a generic approach. The device annealed at 200 °C for 3 h results in sufficient recovery in drain current versus gate voltage characteristics.