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机译:饱和电流减小的1200V 4H-SIC横向MOSFET的仿真研究
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Microelect Nanjing 210096 Peoples R China;
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Microelect Nanjing 210096 Peoples R China;
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Elect Sci & Engn Nanjing 210096 Peoples R China;
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Elect Sci & Engn Nanjing 210096 Peoples R China;
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Elect Sci & Engn Nanjing 210096 Peoples R China;
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Elect Sci & Engn Nanjing 210096 Peoples R China;
CSMC Technol Co Wuxi 214061 Jiangsu Peoples R China;
CSMC Technol Co Wuxi 214061 Jiangsu Peoples R China;
Southeast Univ Natl ASIC Syst Engn Res Ctr Sch Elect Sci & Engn Nanjing 210096 Peoples R China;
Silicon carbide; Logic gates; Electric potential; Doping; Oxidation; MOSFET; Etching; 4H-SiC; LDMOS; process; saturation current; breakdown voltage; lateral DMOS; SiC DMOS; SiC LDMOS; short circuit; lateral MOSFET;
机译:降低饱和电流的4H-SiC超结沟槽MOSFET
机译:用于设计具有低导通电阻和鲁棒性的3300-V级4H-SiC注入-外延MOSFET的新型边缘终端和电流扩散层的改进仿真模型
机译:SI植入对4H-SIC横向MOSFET界面影响的研究
机译:4H-SIC MOSFET中漏极电流饱和的研究
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:基于量子校正蒙特卡罗模拟的III-V半导体,Ge和Si沟道n-mos驱动电流的比较研究
机译:4H-sIC垂直D-mosfet的脉冲功率开关及器件表征