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Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation

机译：基于量子校正蒙特卡罗模拟的III-V半导体，Ge和Si沟道n-mos驱动电流的比较研究

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Mori Takashi; AzumaYusuke; Tsuchiya Hideaki; Miyoshi Tanroku;
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年度 2008
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正文语种 eng
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1. Comparative Study on Drive Current of III–V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation [J] . Mori T., Azuma Y., Tsuchiya H., IEEE transactions on nanotechnology . 2008,第2期

机译：基于量子校正蒙特卡罗模拟的III–V半导体，Ge和Si沟道n- s的驱动电流的比较研究
2. Monte Carlo Simulation of Spin Polarized Transport in Nanowires and 2-D Channels of III-V Semiconductors [J] . Swetali Nimje, Ashutosh Sharma, Akshaykumar Salimath, Quantum Matter . 2015,第6期

机译：III-V半导体的纳米线和二维通道中自旋极化传输的蒙特卡洛模拟
3. A Quantum-Corrected Monte Carlo Study on Quasi-Ballistic Transport in Nanoscale MOSFETs [J] . Hideaki Tsuchiya, Kazuya Fujii, Takashi Mori, IEEE Transactions on Electron Devices . 2006,第12期

机译：量子校正的蒙特卡洛研究，用于纳米级MOSFET的准弹道传输。
4. Comparative Analysis of Threshold Voltage Variations in Presence of Random Channel Dopants And A Single Random Interface Trap for 45 nm n-MOSFET As Predicted By Ensemble Monte Carlo Simulation And Existing Analytical Model Expressions [C] . N. Ashraf, D. Vasileska NSTI nanotechnology conference and expo;Nanotech conference expo;NSTI-Nanotech 2011;TechConnect world annual conference expo . 2011

机译：整体蒙特卡罗模拟和现有解析模型表示的45nm n-MOSFET随机沟道掺杂和单个随机界面陷阱存在阈值电压变化的比较分析
5. Study of inversion capacitances and drive currents for MOSFETs made of high-mobility semiconductors. [D] . Lubow, Abigail. 2009

机译：研究由高迁移率半导体制成的MOSFET的反向电容和驱动电流。
6. Corrigendum: Monte Carlo Simulations Suggest Current Chlortetracycline Drug-Residue Based Withdrawal Periods Would Not Control Antimicrobial Resistance Dissemination from Feedlot to Slaughterhouse [O] . Casey L. Cazer, Lucas Ducrot, Victoriya V. Volkova, -1

机译：更正：蒙特卡洛模拟表明当前基于金霉素的药物残留的撤药期不能控制从饲养场到屠宰场的抗药性传播
7. A comparative study on uncertainty quantification for flow in randomly heterogeneous media using monte carlo simulations and conventional and kl-based moment-equation approaches [O] . Zhiming Lu, Dongxiao Zhang 2008

机译：使用蒙特卡罗模拟和常规和基于kl的矩方程方法对随机非均匀介质中流动的不确定性量化进行的比较研究
8. Monte-Carlo Simulations of MBE (Molecular Beam Epitaxy) Growth of III-V Semiconductors: The Growth Kinetics, Mechanism, and Consequences for the Dynamics of RHEED Intensity [R] . Ghaisas, S. V., Madhukar, A. 1985

机译：monte-Carlo模拟mBE（分子束外延）III-V半导体的生长：RHEED强度动力学的生长动力学，机制和后果

Comparative Study on Drive Current of III-V Semiconductor, Ge and Si Channel n- mosfets based on Quantum-Corrected Monte Carlo Simulation

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