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How to reduce the on-resistance of the bidirectional current blocking MOSFET and bidirectional current blocking MOSFET
How to reduce the on-resistance of the bidirectional current blocking MOSFET and bidirectional current blocking MOSFET
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机译:如何降低双向电流阻断MOSFET和双向电流阻断MOSFET的导通电阻
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摘要
A bidirectional current blocking lateral MOSFET including a source and a drain which are not shorted to a substrate, and voltages that are applied to the source and drain are both higher than the voltage at which the body is maintained (for an N-channel MOSFET) or lower than the voltage at which the body is maintained (for a P-channel MOSFET). The on-resistance of the MOSFET is improved by decreasing the conductance of the epi region and disposing a thin threshold adjust layer on the surface of the substrate between the oxide layer and a channel of the body region separating the source and drain regions. An optional second punchthrough preventing implant is disposed on the substrate surface.
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