High-Performance Vertical III-V Nanowire MOSFETs on Si With gm > 3 mS/μm

摘要

Vertical III-V nanowire MOSFETs have demonstrated excellent performance including high transconductance and high Ion. One main bottleneck for the vertical MOSFETs is the large access resistance arising from the contacts and ungated regions. We demonstrate a process to reduce the access resistance by combining a gate-last process with ALD gate-metal deposition. The devices demonstrate fully scalable gm down to L-g = 25 nm. These vertical core/shell InAs/InGaAs MOSFETs demonstrate g(m) = 3.1 mS/mu m and R-on = 190 mu m. This is the highest g(m) demonstrated on Si. Transmission line measurement verifies a low contact resistance with R-C = 115 Omega mu m, demonstrating that most of the MOSFET access resistance is located in the contact regions.