High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model

摘要

Injection velocity (v(inj)) is a unique figure-of-merit that determines logic transistor ON-current (ION) and switching delay (CV/I). This paper reports on Virtual-Source (VS) based analytical and physical model, which was calibrated by using state-of-the-art experimental data on III-V and Si tri-gate n-MOSFET, aiming to compare High-Performance (HP) logic transistor performance at 7 nm technology-node. We find that a significant increase in the virtual source injection velocity and improvement in the electrostatic integrity are critical, to meet the projected I-ON/I-OFF ratio for the 7 nm technology node. (C) 2015 Published by Elsevier Ltd.