机译:利用AL_2O_3对高性能逻辑装置和电气/热共同设计来改进GE垂直堆叠GAA纳米线PMOSFET的自热效应
Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea|Korea Mil Acad Dept Comp Sci Seoul 01805 South Korea;
Ajou Univ Dept Elect & Comp Engn Suwon 16499 South Korea;
Myongji Univ Dept Elect Engn Yongin 17058 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Pukyong Natl Univ Sch Elect Engn Busan 48513 South Korea;
Seoul Natl Univ Interuniv Semicond Res Ctr ISRC Seoul 08826 South Korea|Seoul Natl Univ Dept Elect & Comp Engn Seoul 08826 South Korea;
Self-heating effects; Germanium; Vertically stacked GAA MOSFET; High-performance semiconductor; Device reliability; Gate leakage current; high-k;
机译:5纳米GAA垂直堆叠纳米线FET的电和热性能的研究和优化
机译:钽或氧化钛高k介电叠层的SiGe pMOSFET器件的电气特性
机译:在ALD TiN / Al_2O_3 / HfAlO_x / Al_2O_3栅叠层下使用应变Si_(0.7)Ge_(0.3)表面沟道的pMOSFET中的空穴迁移率下降进行量化
机译:垂直异质结GE_0.92SN_0.08 / GE GAA纳米线PMOSFET:低SS为67 MV / DEC,小DIBL 24 MV / V和最高G_M,EXT870μS/μM
机译:混合核-壳纳米线电极利用垂直排列的碳纳米纤维阵列实现高性能储能。
机译:优化四层垂直堆叠水平门 - 全面的结构和电气特性 - 全周Si NanosheLs设备
机译:出版商注:“关于电接触GaAs和GE纳米线器件的直接写入方法”应用。物理。吧。 96,223107(2010)
机译:LsI / VLsI(大规模集成/超大规模集成)离子注入Gaas(砷化镓)IC处理。附录B.用于集成高速逻辑电路的Gaas mEsFET器件的二维建模