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A Single Transistor Neuron With Independently Accessed Double-Gate for Excitatory-Inhibitory Function and Tunable Firing Threshold Voltage

机译:单个晶体管神经元,具有独立访问的双栅极,用于兴奋性抑制功能和可调烧制阈值电压

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For the first time, a single transistor neuron (1T-neuron) with an independently accessed double-gate structure is demonstrated for excitatory-inhibitory function, and control of the firing threshold voltage (V-T,V- firing). The double-gate is composed of a primary gate and a secondary gate. The former is to determine an excitatory and inhibitory state as a toggle switch and the latter is to dynamically adjust V-T,V- firing for homeostasis to sustain reliable neuromorphic operation. In addition to its conventional excitation function, the newly implemented inhibition function improves the energy efficiency of the neuromorphic network. The tunable threshold voltage for firing maintains homeostasis, even for high or low transmitted signals that are out of a desired spiking frequency range.
机译:首次,对具有独立访问的双栅极结构的单个晶体管神经元(1T-Neuron)用于兴奋性抑制功能,并控制烧制阈值电压(V-T,V型)。双栅极由主栅极和次级门组成。前者是确定兴奋性和抑制态作为肘节开关,后者是动态调节V-T,V型促进稳态以维持可靠的神经形态操作。除了传统的激发功能之外,新实施的抑制功能提高了神经形态网络的能量效率。即使对于超出所需尖刺频率范围的高或低传输信号,用于发射的可调谐阈值电压也保持稳态。

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