机译:双栅极MOS_2场效应晶体管,具有用于多功能逻辑电路的全范围可调阈值电压
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Huazhong Univ Sci & Technol Wuhan Natl High Magnet Field Ctr Wuhan 430074 Peoples R China|Huazhong Univ Sci & Technol Sch Opt & Elect Informat Wuhan 430074 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
Hunan Univ Key Lab Micronano Phys & Technol Hunan Prov Coll Mat Sci & Engn Changsha 410082 Peoples R China;
MoS; (2); double-gate FETs; inverters; reconfigurable#8203; circuits; ternary logic;
机译:基于潜在的阈值电压和用于无连接双栅金属氧化物半导体场效应晶体管的阈值电压和亚阈值摆幅模型,具有双层栅极
机译:独立双栅隧道鳍场效应晶体管的背偏置对鳍长度对阈值电压调制的影响
机译:双栅极隧道场效应晶体管:栅极阈值电压建模和提取
机译:具有可调节阈值电压的双栅极悬浮硅纳米线晶体管,用于化学/生物传感应用
机译:基于N沟道InGaAsP-InP的倒置通道技术器件(ICT)的设计,制造和表征,用于光电集成电路(OEIC):双异质结光电开关(DOES),异质结场效应晶体管(HFET),双极倒置沟道场-效应晶体管(BICFET)和双极型反向沟道光电晶体管(BICPT)。
机译:调整电解质门控有机场效应晶体管中的阈值电压
机译:场效应晶体管:多层MOS2场效应晶体管的阈值电压控制通过十八烷基氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示器(小7/2019)