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Field-Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates (Small 7/2019)

机译：场效应晶体管：多层MOS2场效应晶体管的阈值电压控制通过十八烷基氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示器（小7/2019）

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Jeongkyun Roh; Jae Hyeon Ryu; Geun Woo Baek; Heeyoung Jung; Seung Gi Seo; Kunsik An; Byeong Guk Jeong; Doh C. Lee; Byung Hee Hong; Wan Ki Bae; Jong-Ho Lee; Changhee Lee; Sung Hun Jin;
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1. Threshold Voltage Control of Multilayered MoS_2 Field- Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates [J] . Jeongkyun Roh, Jae Hyeon Ryu, Geun Woo Baek, Small . 2019,第7期

机译：多层MOS_2场效应晶体管的阈值电压控制通过十八烷基三氯硅烷及其应用于由增强模式逻辑门驱动的有源矩阵量子点显示的应用
2. Threshold-voltage control and enhancement-mode characteristics in multilayer tin disulfide field-effect transistors by gate-oxide passivation with an alkylphosphonic acid self-assembled monolayer [J] . Ute Zschieschang, Tanja Holzmann, Alexander Kuhn, Journal of Applied Physics . 2015,第10期

机译：烷基膦酸自组装单层通过栅氧化物钝化的多层二硫化锡场效应晶体管的阈值电压控制和增强模式特性
3. Control of Threshold Voltage of Enhancement-Mode Al_xGa_(1-x)N/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact [J] . Takahiro Fujii, Norio Tsuyukuchi, Yoshikazu Hirose, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2007,第1期

机译：使用p-GaN栅极触点控制增强模式Al_xGa_（1-x）N / GaN结异质结构场效应晶体管的阈值电压
4. A flexible, lightweight braille sheet display with plastic actuators driven by an organic field-effect transistor active matrix [C] . Kato Y., Iba S., Sekitani T., Electron Devices Meeting, 2005. IEDM Technical Digest. IEEE International . 2005

机译：柔性，轻便的盲文显示器，带有由有机场效应晶体管有源矩阵驱动的塑料致动器
5. Fabrication and Characterization of III-V Tunnel Field-Effect Transistors for Low Voltage Logic Applications. [D] . Romanczyk, Brian R. 2013

机译：用于低压逻辑应用的III-V隧道场效应晶体管的制造与表征。
6. Tuning the threshold voltage in electrolyte-gated organic field-effect transistors [O] . Loïg Kergoat, Lars Herlogsson, Benoit Piro, 2012

机译：调整电解质门控有机场效应晶体管中的阈值电压
7. Enhancement-mode metal-insulator-semiconductor GaN/AlInN/GaN heterostructure field-effect transistors on Si with a threshold voltage of +3.0V and blocking voltage above 1000V [O] . Lee K.B., Guiney I., Jiang S., 2015

机译：si上的增强型金属 - 绝缘体 - 半导体GaN / alInN / GaN异质结构场效应晶体管，阈值电压为+ 3.0V，阻断电压高于1000V

Field-Effect Transistors: Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates (Small 7/2019)

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