Simulation Analysis of Narrow Width Effect in Nano Structured Fully Depleted SOI MOSFET

摘要

This paper is about the analysis of width effect in a narrow channel fully depleted SOI MOSFET. The effect of width variation is observed on threshold voltage of Nano structured Fully Depleted SOI MOSFET. In present analysis variation in narrow channel width and short channel length of the device reduced the threshold voltage . The channel conduction is also influence by changing the Tsi and Tox of the proposed device. The Lateral direction engineering is performed during the analysis of NSMOSFET(NanoStructured).