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Design, Fabrication, and Reliability of Low-Cost Flip-Chip-On-Board Package for Commercial Applications up to 50 GHz

机译:低成本,频率高达50 GHz的商业应用的板上倒装芯片封装的设计,制造和可靠性

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This paper presents a flip-chip-on-board (FCOB) packaging technology using a Rogers RO3210 laminate for microwave applications. Compared to the conventional microwave packaging architecture, the proposed FCOB technology skips one level of the ceramic package and thus results in lower reflections and manufacturing costs. To fulfill the small dimension requirement on printed circuit boards, the coplanar waveguide (CPW) transmission line and flip-chip bump were fabricated on a high-$k$ RO3210 board $(varepsilon_{r}=10.2)$ with photolithography and electroplating. The GaAs chip patterned with the CPW line was then flip-chip-mounted onto the RO3210 laminate board. This structure displayed excellent performance from dc to 50 GHz with a return loss ${rm S}_{11}$ greater than 18 dB and insertion loss ${rm S}_{21}$ less than 0.5 dB. Meanwhile, the flip-chip bonding of the in-house-fabricated ${rm In}_{0.52}{rm Al}_{0.48}{rm As}/{rm In}_{0.6}{rm Ga}_{0.4}{rm As}$ metamorphic high-electron-mobility transistor devices on RO3210 also displayed excellent gain performance with a small degradation of 1 dB from dc to 40 GHz, showing the potential of implementing microwave integrated circuits on RO3210. To enhance the mechanical reliability, an epoxy-based underfill was injected into the flip-chip assemblies. Thermal cycling tests were performed to test the interconnect reliability, and the results indicated that the samples passed the thermal cycling test at least up to 600 cycles, showing excellent reliability for commercial applications. To the best of the authors' knowledge, this is the first study that evaluates the use of the RO3210 laminate -nor microwave flip-chip in open literature.
机译:本文介绍了一种用于微波应用的使用Rogers RO3210层压板的板上倒装芯片(FCOB)封装技术。与传统的微波封装结构相比,所提出的FCOB技术跳过了陶瓷封装的一层,因此降低了反射和制造成本。为了满足印刷电路板上的小尺寸要求,共面波导(CPW)传输线和倒装芯片凸点通过光刻和电镀在高价RO3210板上制造(varepsilon_ {r} = 10.2)$。然后将用CPW线图案化的GaAs芯片倒装芯片安装到RO3210层压板上。这种结构在从直流到50 GHz的范围内表现出出色的性能,回波损耗$ {rm S} _ {11} $大于18 dB,插入损耗$ {rm S} _ {21} $小于0.5 dB。同时,内部制造的$ {rm In} _ {0.52} {rm Al} _ {0.48} {rm As} / {rm In} _ {0.6} {rm Ga} _ { RO3210上的0.4} rms} $变质高电子迁移率晶体管器件还显示了出色的增益性能,从dc到40 GHz的衰减很小,为1 dB,显示了在RO3210上实现微波集成电路的潜力。为了提高机械可靠性,将基于环氧树脂的底部填充剂注入到倒装芯片组件中。进行了热循环测试以测试互连的可靠性,结果表明样品至少通过了600次循环后才通过热循环测试,显示出商业应用中出色的可靠性。就作者所知,这是第一篇评估开放文献中RO3210层压板或微波倒装芯片使用情况的研究。

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