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An Experimental Design for Processing Parameter Optimization for Cathode Arc Plasma Deposition of ZnO Films

机译:ZnO薄膜阴极电弧等离子体沉积工艺参数优化的实验设计

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An experimental design utilizing artificial neural networks (ANNs), the Taguchi method, and the genetic algorithm (GA) is proposed to obtain optimal processing parameters for cathode arc plasma deposition of ZnO thin films on a glass substrate. The Taguchi method's orthogonal array is used to minimize the number of required experiments and to gather the experimental data. An ANN is then used to construct a system model based on the experimental data. Finally, the GA is used to determine the optimal process parameters. The average resistivity obtained from the optimal processing parameters is 3.19 × 10-3 Q-cm and the average transmittance obtained is 86.04%, both of which improve on results obtained using the Taguchi method alone (3.69 × 10-3 Q-cm and 85.41%). This indicates that the proposed design is a viable approach for determining the optimal process parameters.
机译:提出了一种利用人工神经网络(ANN),田口方法和遗传算法(GA)进行实验设计的方法,以获得在玻璃基板上进行ZnO薄膜阴极阴极等离子体沉积的最佳工艺参数。 Taguchi方法的正交数组用于最小化所需实验的数量并收集实验数据。然后使用ANN根据实验数据构建系统模型。最后,遗传算法用于确定最佳工艺参数。从最佳工艺参数获得的平均电阻率为3.19×10-3 Q-cm,获得的平均透射率为86.04%,两者均比仅使用Taguchi方法获得的结果有所提高(3.69×10-3 Q-cm和85.41)。 %)。这表明所提出的设计是确定最佳工艺参数的可行方法。

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