机译:ZnO薄膜阴极电弧等离子体沉积工艺参数优化的实验设计
Department of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan;
Medical Devices and Opto-Electronics Equipment Department, Metal Industries Research and Development Center, Kaohsiung, Taiwan;
Department of Materials Engineering, National Pingtung University of Science and Technology, Pingtung City, Taiwan;
Department of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan;
Department of Electrical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung, Taiwan;
Zinc oxide; II-VI semiconductor materials; Genetic algorithms; Signal to noise ratio; Thin films; Artificial neural networks;
机译:灰色关系Taguchi法优化ZnO薄膜阴极电弧等离子体沉积工艺参数
机译:Ti靶电弧电流对双靶阴极电弧等离子体沉积制备Ti掺杂ZnO薄膜性能的影响
机译:灰色 - 塔布技术在Si衬底上生长的电阻率,沉积速率和抗氮薄膜的电阻率,沉积速率和灵敏度优化
机译:脉冲激光沉积ZnO薄膜的工艺参数优化
机译:通过改进的微波等离子体辅助化学气相沉积金刚石工艺制造的薄膜冷阴极材料的生长,表征和电子场发射测量。
机译:用于环境光学传感器的射频溅射硫族化物薄膜沉积优化的实验设计方法
机译:A-C:由双阴极滤波的阴极电弧等离子体沉积产生的Mo膜的电气性能